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Si1033X
Vishay Siliconix
TYPICAL CHARACTERISTICS T A = 25 °C, unless otherwise noted)
0.3
0.2
0.1
I D = 0.25 mA
3.0
2.5
2.0
- 0.0
- 0.1
- 0.2
- 0.3
1.5
1.0
0.5
0.0
V GS = 2.8 V
- 50
- 25
0
25
50
75
100
125
- 50
- 25
0
25
50
75
100
125
T J - Tempserature (°C)
Threshold Voltage Variance vs. Temperature
0
-1
-2
-3
-4
-5
-6
-7
T J - Temperature (°C)
I GSS vs. Temperature
- 50
- 25
0
25 50 75
100
125
T J - Temperature (°C)
BV GSS vs. Temperature
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
0.05
P DM
t 1
t 1
t 2
0.02
Single Pulse
t 2
1. Duty Cycle, D =
2. Per Unit Base = R thJA = 500 °C/W
3. T JM - T A = P DM Z thJA(t)
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71428 .
www.vishay.com
4
Document Number: 71428
S10-2544-Rev. C, 08-Nov-10
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